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          Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB751S-40 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) Low current rectification ?Features 1) Ultra small mold type. (EMD2) 2) Low VF 3) High reliability ?Construction Silicon epitaxial planar ?Structure ?Taping specifications (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive peak) 40VRM V Reverse voltage (DC) 30VR V Average retified forward current 30Io mA Forward currnt surge peak(60Hz/1cyc) 200IFSM mA Junction temperature 125Tj °C Storage temperature -40 to +125Tstg °C ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions VF - - 0.37 V IF=1mA IR - - 0.5 μA VR=30V Ct - 2 - pF VR=1V , f=1MHz Parameter Forward voltage Reverse current Capacitance between terminals EMD2 0.8 1.7 0.6 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 1.2±0.05 1.6±0.1 0.900.95±0.06±0.05 0 4.0±0.1 4.0±0.1 2.0±0.05 φ1.5±0.05φ1.55±0.05 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.750.76±0.05±0.05 1.26±0.05 0 φ0.5 0.6 2.0±0.05 1.3±0.06 0 2.45±0.1 Empty pocket空ポケット 0.2 2.40 ± 0.05 1.25 ? 0.06 ? 0 1.25 ? 0.06 ? 0 1/3 2011.03 - Rev.C |